Product Code: GD200HFX170C2S
Type: Silicon
Configuration: Half Bridge
Emitter Voltage VCEO Maximum: 1700 V
Emitter Saturation Voltage: 1.85 V
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 1271 W
Minimum Operating Temperature: -40 deg C
Maximum Operating Temperature: +150 deg C
Brand: STARPOWER
Collector Current: 200 A
UNSPSC No.: +1 +1 930 206 0000
STARPOWER IGBT Module GD200HFX170C2S Silicon Half Bridge 1700 V 1.85 V -40 deg C +150 deg C
STARPOWER IGBT Module GD200HFX170C2S Silicon Half Bridge 1700 V 1.85 V -40 deg C +150 deg C
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